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Preliminary Technical Information
PolarP TM
Power MOSFET
IXTR20P50P
V DSS
I D25
R DS(on)
= - 500V
= - 13A
≤ 490m Ω
P-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247 (IXTR)
E153432
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
- 500
- 500
V
V
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
-13
V
V
A
Isolated Tab
I DM
I AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
- 60
- 20
2.5
A
A
J
G = Gate
S = Source
D = Drain
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS
I ISOL ≤ 1mA
Mounting force
10
190
-55 ... +150
150
-55 ... +150
300
260
t = 1min 2500
t = 1s 3000
20..120 / 4.5..27
5
V/ns
W
° C
° C
° C
° C
° C
V~
V~
N/lb.
g
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
The rugged PolarP TM process
Low Q G
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
DC Choppers
Automatic test equipment
BV DSS
V GS = 0V, I D = - 250 μ A
- 500
V
Load-Switch Application
Fuel Injection Systems
V GS(th)
V DS = V GS , I D = - 250 μ A
- 2.5
- 4.5
V
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = -10V, I D = -10A, Note 1
T J = 125 ° C
- 25 μ A
- 200 μ A
490 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99983(5/08)
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